20 stern ave. springfield, new jersey 07081 usa silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 BD139 description ? dc current gain- : hfe=40(min)@lc=0.15a ? collector-emitter sustaining voltage - : vceo(sus)= sov(min) ? complement to type bd140 ?. applications ? designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ ta=25c collector power dissipation @ tc=25"c junction temperature storage temperature range value 100 80 5 1.5 0.5 1.25 12 5 150 -55-150 thermal characteristics symbol rth j-c rth j-a parameter thermal resistance.junction to case thermal resistance.junction to ambient unit v v v a a w 'c 'c max 10 100 unit "cm/ 'c/w ? .-t; pin 1. emitter 2. collector i 3. base ! 2 3 to-1 26 package ^|-f -[ 1 ! j h - r d-* n & g "f ? h ??- 2 3 dim a b c d f g h j k 0 r v jl t - t a v ; k ~* j mm win max 10.70 10.90 7.70 7,90 2.60 2.30 o.g6 0.36 3.10 3.30 4.43 4.68 2.00 2.20 1.35 1.55 16.10 16.30 3.70 3.90 0.40 0.60 1.17 1.37 _| '}. ?*-r nj scini-conductors reserves the right lo change test conilitions, parameter limits and package dimensions without luiikv. information furnished hy nj senii-conductors is believed to be both accurate and reliahle at the lime ol going lo press. llu\\e\er, n.i semi-oindiiclors assumes no responsibility for an> errors or omissions discovered in its use. n.i scnti-t imitliiclois enciiurages customers to verify that datasheets are eiinvnt before placing orders. qualify semi-conductors
silicon npn power transistor BD139 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vbe(or) icbo iebo rife-t hpe-2 hpe-3 parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain conditions lc= 30ma ; ib= 0 lc= 0.5a; ib= 50ma lc= 0.5a; vce= 2v vcb= 30v; ie= 0 vcb=30v;le=0,tc=125dc veb= 5v; lc= 0 lc= 5ma ; vce= 2v lc= 0.5a ; vce= 2v lc=0.15a;vce=2v min 80 25 25 40 typ. max 0.5 1.0 0.1 10 10 250 unit v v v ua ua hfe_3 classifications 6 40-100 10 63-160 16 100-250
silicon npn power transistor BD139 18c 1:0 g to 3 o 4c ,..- b b e-ic characteristics collector current icfmai safe operating area 10.0 5.0 2,0 1.0 0.5 m 002 tim ti = 'j 5 ms ?? * ?? d ^"-^ |
